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2SD1902_15 PDF预览

2SD1902_15

更新时间: 2024-11-25 01:08:15
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科信 - KEXIN /
页数 文件大小 规格书
3页 1130K
描述
NPN Transistors

2SD1902_15 数据手册

 浏览型号2SD1902_15的Datasheet PDF文件第2页浏览型号2SD1902_15的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1902  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
High reliablity  
Complementary to 2SB1266  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
+0.15  
-0.15  
4.60  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
60  
6
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
3
A
W
I
CP  
8
P
C
1.65  
150  
T
J
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
60  
60  
6
Ic= 1 mAI  
Ic= 5 mARBE= ∞  
= 1 mAI = 0  
CB= 50 V , I = 0  
EB= 5V , I =0  
E= 0  
I
E
C
I
CBO  
EBO  
V
V
E
0.1  
0.1  
1
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=2 A, I  
B
=200mA  
=200mA  
0.4  
0.7  
V
C
=2 A, I  
B
1.2  
1
V
BE  
V
V
V
V
V
CE= 5V, I  
CE= 5V, I  
CE= 5V, I  
C= 500mA  
C= 500mA  
C= 3 A  
70  
20  
280  
DC current gain  
hFE  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
E= 0,f=1MHz  
110  
40  
pF  
f
CE= 5V, I = 500 mA  
C
MHz  
Classification of hfe(1)  
Type  
2SD1902-Q  
70-140  
2SD1902-R  
100-200  
2SD1902-S  
140-280  
Range  
1
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