Datasheet > 2SD1910

2SD1910

更新时间： 2024-11-23 22:52:47

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	104K
描述
Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1910 数据手册

2SD1910

Silicon Diffused Power Transistor

GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a

plastic envelope with integrated efficiency diode,prim-

arily for use in horizontal deflection circuites of colour

television receivers

QUICK REFERENCE DATA

TO-3PFM

SYMBOL

V_CESM

V_CEO

I_C

I_CM

P_tot

V_CEsat

I_csat

V_F

PARAMETER

CONDITIONS

TYP

MAX

1500

600

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Diode forward voltage

T_mb25

I_C= 3.0A; I_B= 0.8A

f = 16KHz

I_F= 3.0A

1.6

2.0

1.0

Fall time

I_Csat= 3.0A; f = 16KHz

t_f

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

I_C

PARAMETER

CONDITIONS

MIN

MAX

1500

600

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Base current (DC)

I_CM

I_B

Base current peak value

Total power dissipation

Storage temperature

I_BM

P_tot

T_stg

T_j

Tmb 25

-65

150

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

1.0

UNIT

Collector cut-off current

V_BE= 0V; V_CE= V_CESMmax

T_j= 125

I_CE

I_CES

2.5

Collector-emitter sustaining voltage

I_B= 0A; I_C= 100mA

L = 25mH

V_CEOsust

Collector-emitter saturation voltages

Base-emitter satuation voltage

DC current gain

I_C= 3.0A; I_B= 0.8A

I_C= 300mA; V_CE= 5V

I_F= 3.0A

V_CEsat

V_BEsat

h_FE

V_F

f_T

C_c

1.5

Diode forward voltage

1.6

2.0

MHz

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

Switching times(16KHz line deflecton circuit)

Turn-off storage time Turn-off fall time

I_C= 0.1A; V_CE= 10V

V_CB= 10V

I_C=3A,I_B(end)=0.8A,V_CC=105V

t_s

t_f

0.7

1.0

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

下载PDF

与2SD1910相关器件

型号	品牌	获取价格	描述	数据表
2SD1911	ISC	获取价格	Silicon NPN Power Transistors
2SD1911	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD1911	Wing Shing	获取价格	Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD1912	SANYO	获取价格	LOW FREQUENCY POWER AMP APPLICATIONS
2SD1912	ISC	获取价格	Silicon NPN Power Transistor
2SD1912Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD1912R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD1912S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD1913	SANYO	获取价格	60V/3A Low-Frequency Power Amplifier Applications
2SD1913	ISC	获取价格	Silicon NPN Power Transistors