Datasheet > 2SD1910

2SD1910

更新时间： 2024-11-24 07:31:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	113K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1910 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1910

DESCRIPTION

·With TO-3PFM package

·High breakdown voltage

·High speed switching

·Built-in damper diode

APPLICATIONS

·For use in TV horizontal output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PFM) and symbol

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

600

Open collector

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25ꢀ

ꢀ

T_j

150

-55~150

T_stg

ꢀ

12 3

中文翻译

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2SD1912	SANYO	获取价格	LOW FREQUENCY POWER AMP APPLICATIONS
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2SD1912Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD1912R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD1912S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
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