Datasheet > 2SD1862TV2/Q

2SD1862TV2/Q

更新时间： 2024-09-15 09:48:27

品牌	Logo	应用领域
罗姆 - ROHM		电视
页数	文件大小	规格书
3页	151K
描述
2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN

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数据手册

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2SD1862TV2/Q 数据手册

Medium power transistor (32V, 2A)

2SD1758 / 2SD1862

Features

Dimensions (Units : mm)

1) Low V^CE(sat).

V^CE(sat)= 0.5V (Typ.)

(I^C/IB = 2A / 0.2A)

2) Complements the 2SB1182 / 2SB1240

2SD1758

2SD1862

2.5 0.2

+0.2

6.8 0.2

2.3

6.5 0.2

−0.1

C0.5

+0.2

5.1

0.5 0.1

−0.1

0.65 0.1

0.75

0.65Max.

Structure

Epitaxial planar type NPN silicon transistor

0.9

0.55 0.1

1.0 0.2

2.3 0.2 2.3 0.2

(1) (2) (3)

0.5 0.1

(1) (2)

(3)

2.54

1.05

0.45 0.1

ROHM : CPT3

EIAJ : SC-63

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

A (DC)

A (Pulse)

Collector current

2.5

∗1

Collector

2SD1758

W (T

=25°C)

∗2

power

2SD1862

dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗1 Single pulse, PW=20ms

∗2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm²or lager.

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−

=50μA

Collector-emitter breakdown voltage BVCEO

C=1mA

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

=50μA

CB=20V

EB=4V

CBO

EBO

CE(sat)

−

μA

Emitter cutoff current

−

∗

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

120

−

390

0.8

−

CE=3V, I =0.5A

0.5

CE=5V, I

CB=10V, I

=2A/0.2A

=−50mA, f=100MHz

=0A, f=1MHz

−

100

MHz

Output capacitance

Cob

−

Measured using pulse current.

∗

www.rohm.com

2010.04 - Rev.C

1/2

12 3

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