Datasheet > 2SD1802T(TO-251)

2SD1802T(TO-251)

更新时间： 2024-11-25 10:02:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	385K
描述
Transistor

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2SD1802T(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

TO-251

2SD1802 TRANSISTOR (NPN)

FEATURES

Adoption of FBET,MBIT Processes

1.BASE

Large Current Capacity and Wide ASO

Low Collector-to-Emitter Saturation Voltage

Fast Switching Speed

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

℃

T_J

150

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=10µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

V_CB=40V, I_E=0

V_EB=4V, I_C=0

µA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=2V, I_C=100mA

V_CE=2V, I_C=3A

100

560

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=2A, I_B=100mA

V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

0.5

1.2

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

140-280

200-400

280-560

Range

A,Jun,2011

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