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2SD1802T(TO-252) PDF预览

2SD1802T(TO-252)

更新时间: 2024-11-25 05:47:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
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2页 379K
描述
Transistor

2SD1802T(TO-252) 数据手册

 浏览型号2SD1802T(TO-252)的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-252 Plastic-Encapsulate Transistors  
TO-252  
2SD1802 TRANSISTOR (NPN)  
FEATURES  
1.BASE  
z
z
z
z
Adoption of FBET,MBIT Processes  
2.COLLECTOR  
3.EMITTER  
Large Current Capacity and Wide ASO  
Low Collector-to-Emitter Saturation Voltage  
Fast Switching Speed  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
Collector Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
V
50  
V
6
V
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
3
1
A
PC  
W
TJ  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
60  
50  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
IC =10µA, IE=0  
V(BR)CEO IC =1mA, IB=0  
V
V(BR)EBO  
ICBO  
V
IE=10µA, IC =0  
VCB=40V, IE=0  
VEB=4V, IC=0  
1
1
µA  
µA  
Emitter cut-off current  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=2V, IC=100mA  
VCE=2V, IC=3A  
100  
35  
560  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=2A, IB=100mA  
IC=2A, IB=100mA  
VCE=10V, IC=50mA  
VCB=10V, IE=0, f=1MHz  
0.5  
1.2  
V
V
150  
25  
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
R
S
T
U
Rank  
100-200  
140-280  
200-400  
280-560  
Range  
A,Jun,2011  

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