JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
TO-252
2SD1802 TRANSISTOR (NPN)
FEATURES
1.BASE
z
z
z
z
Adoption of FBET,MBIT Processes
2.COLLECTOR
3.EMITTER
Large Current Capacity and Wide ASO
Low Collector-to-Emitter Saturation Voltage
Fast Switching Speed
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
50
V
6
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
1
A
PC
W
℃
℃
TJ
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
50
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC =10µA, IE=0
V(BR)CEO IC =1mA, IB=0
V
V(BR)EBO
ICBO
V
IE=10µA, IC =0
VCB=40V, IE=0
VEB=4V, IC=0
1
1
µA
µA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=2V, IC=100mA
VCE=2V, IC=3A
100
35
560
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
0.5
1.2
V
V
150
25
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
R
S
T
U
Rank
100-200
140-280
200-400
280-560
Range
A,Jun,2011