5秒后页面跳转
2SD1802U(TP) PDF预览

2SD1802U(TP)

更新时间: 2024-11-24 13:04:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
7页 100K
描述
TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR

2SD1802U(TP) 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):280最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):15 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SD1802U(TP) 数据手册

 浏览型号2SD1802U(TP)的Datasheet PDF文件第2页浏览型号2SD1802U(TP)的Datasheet PDF文件第3页浏览型号2SD1802U(TP)的Datasheet PDF文件第4页浏览型号2SD1802U(TP)的Datasheet PDF文件第5页浏览型号2SD1802U(TP)的Datasheet PDF文件第6页浏览型号2SD1802U(TP)的Datasheet PDF文件第7页 
Ordering number : EN2113E  
2SB1202/2SD1802  
Bipolar Transistor  
http://onsemi.com  
(–)  
(–)  
50V, 3A, Low V (sat) (PNP)NPN Single TP/TP-FA  
CE  
Applicaitons  
Voltage regulators, relay drivers, lamp drivers, electrical equipment  
Features  
Adoption of FBET and MBIT processes  
Low collector to emitter saturation voltage  
Large current capacitance and wide ASO  
Fast switching speed  
Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller  
( ): 2SB1202  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(--)60  
(--)50  
(--)6  
CBO  
V
V
CEO  
V
V
EBO  
I
C
(--)3  
A
Collector Current (Pulse)  
I
CP  
(--)6  
A
Continued on next page.  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
unit : mm (typ)  
unit : mm (typ)  
Package Dimensions  
Package Dimensions  
7518-003  
7003-003  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5 2SB1202S-E  
2SB1202S-TL-E  
2SB1202T-TL-E  
2SD1802S-TL-E  
2SD1802T-TL-E  
2SB1202T-E  
2SD1802S-E  
2SD1802T-E  
4
0.85  
0.7  
0.5  
0.85  
1.2  
1
2
3
0.6  
0.6  
0 to 0.2  
1.2  
0.5  
1 : Base  
1 : Base  
2 : Collector  
3 : Emitter  
4 : Collector  
2 : Collector  
3 : Emitter  
4 : Collector  
1
2
3
2.3  
2.3  
2.3  
2.3  
TP-FA  
TP  
Product & Package Information  
• Package : TP  
• Package : TP-FA  
JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK  
JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK  
Minimum Packing Quantity : 700 pcs./reel  
Minimum Packing Quantity : 500 pcs./bag  
2,4  
Marking(TP, TP-FA)  
Packing Type (TP-FA) : TL  
Electrical Connection  
B1202  
D1802  
1
RANK  
LOT No.  
RANK  
LOT No.  
(For PNP, the polarity is reversed.)  
TL  
3
Semiconductor Components Industries, LLC, 2013  
September, 2013  
92513 TKIM/82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113-1/7  

与2SD1802U(TP)相关器件

型号 品牌 获取价格 描述 数据表
2SD1802U(TP-FA) ONSEMI

获取价格

TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR
2SD1803 ONSEMI

获取价格

Bipolar Transistor 50V, (–)5A, Low VCE(sat)
2SD1803 SANYO

获取价格

High-Current Switching Applications
2SD1803 UTC

获取价格

HIGH CURRENT SWITCHING APPLICATION
2SD1803 FOSHAN

获取价格

TO-252
2SD1803_10 UTC

获取价格

HIGH CURRENT SWITCHING APPLICATION
2SD1803_15 KEXIN

获取价格

NPN Transistors
2SD1803G-Q-TN3-R UTC

获取价格

Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, H
2SD1803G-S-TN3-R UTC

获取价格

Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, H
2SD1803G-X-TM3-T UTC

获取价格

HIGH CURRENT SWITCHING APPLICATION