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2SD1802S(TO251) PDF预览

2SD1802S(TO251)

更新时间: 2024-11-06 15:26:35
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 299K
描述
Transistor

2SD1802S(TO251) 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):3 A
配置:Single最小直流电流增益 (hFE):140
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):15 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2SD1802S(TO251) 数据手册

 浏览型号2SD1802S(TO251)的Datasheet PDF文件第2页浏览型号2SD1802S(TO251)的Datasheet PDF文件第3页浏览型号2SD1802S(TO251)的Datasheet PDF文件第4页 
UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
HIGH CURRENT SWITCHING  
APPLICATION  
DESCRIPTION  
The UTC 2SD1802 applies to voltage regulators, relay  
drivers, lamp drivers, and electrical equipment.  
1
FEATURES  
*Adoption of FBET, MBIT processes  
*Large current capacity and wide ASO  
*Low collector-to-emitter saturation voltage  
*Fast switching speed  
TO-251  
1: BASE 2: COLLECTOR 3: EMITTER  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
VALUE  
UNIT  
V
V
Collector-Base Voltage  
60  
50  
6
1
15  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Power Dissipation  
Tc=25°C  
V
W
W
A
A
°C  
°C  
Collector Current(DC)  
Collector Current(PULSE)  
Junction Temperature  
Storage Temperature  
Ic  
Icp  
Tj  
3
6
150  
TSTG  
-55 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain (note)  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=40V,IE=0  
MIN TYP MAX UNIT  
1
1
µA  
µA  
IEBO  
VEB=4V,IC=0  
VCE=2V, Ic=100mA  
hFE1  
hFE2  
100  
35  
560  
VCE=2V, Ic=3A  
Gain-Bandwidth Product  
Output Capacitance  
C-E Saturation Voltage  
B-E Saturation Voltage  
C-B Breakdown Voltage  
C-E Breakdown Voltage  
E-B Breakdown Voltage  
Turn-on Time  
fT  
Cob  
VCE=10V,IC=50mA  
VCB=10V,f=1MHz  
IC=2A,IB=100mA  
IC=2A,IB=100mA  
IC=10µA,IE=0  
IC=1mA,RBE=∞  
IE=10µA,IC=0  
See test circuit  
See test circuit  
See test circuit  
150  
25  
0.19  
0.94  
MHz  
pF  
V
V
V
V
V
ns  
ns  
ns  
VCE(sat)  
VBE(sat)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ton  
0.5  
1.2  
60  
50  
6
70  
650  
35  
Storage Time  
Fall Time  
tstg  
tf  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R213-003,A  

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