Datasheet > 2SD1760_09

2SD1760_09

更新时间： 2024-02-04 19:54:41

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	171K
描述
Power Transistor (50V, 3A)

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中文翻译

获取价格

数据手册

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2SD1760_09 数据手册

Power Transistor (50V, 3A)

2SD1760 / 2SD1864

Features

Dimensions (Unit : mm)

1) Low V^CE(sat).

V^CE(sat)= 0.5V (Typ.)

(I^C/IB = 2A / 0.2A)

2SD1760

2SD1864

2.5 0.2

6.8 0.2

+0.2

−0.1

2.3

6.5 0.2

C0.5

+0.2

2) Complements the 2SB1184 / 2SB1243.

5.1

0.5 0.1

−0.1

Structure

0.65Max.

0.65 0.1

0.75

Epitaxial planar type

NPN silicon transistor

0.9

0.5 0.1

0.55 0.1

1.0 0.2

2.3 0.2 2.3 0.2

(1) (2) (3)

(1) (2)

(3)

2.54

1.05

0.45 0.1

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : ATV

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

A (DC)

A (Pulse)

Collector current

∗1

∗2

4.5

2SD1760

2SD1864

W (Tc=25°C)

Collector power

dissipation

°C

Junction temperature

Storage temperature

150

Tstg

−55 to +150

∗1 Single pulse, P =100ms

∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

−

Max.

Unit

Conditions

BV^CBO

BVCEO

BVEBO

−

=50μA

=1mA

−

=50μA

CB=40V

EB=4V

CBO

EBO

CE (sat)

−

μA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

0.5

−

B=2A/0.2A

∗

−

120

−

390

−

CE=3V, I

=0.5A

=−500mA, f=30MHz

=0A, f=1MHz

Transition frequency

MHz

CE=5V, I

Output capacitance

Cob

−

CB=10V, I

∗ Measured using pulse current.

www.rohm.com

2009.12 - Rev.A

1/3

12 3 4

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