Datasheet > 2SD1760P(TO-252)

2SD1760P(TO-252)

更新时间： 2024-02-11 17:13:23

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江苏长电/长晶 - CJ		/
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Transistor

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2SD1760P(TO-252) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD1760P(TO-252) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2 Plastic-Encapsulate Transistors

2SD1760 TRANSISTOR (NPN)

TO-252

FEATURES

Low V_CE(sat). V_CE(sat)= 0.5V (Typ.) (I_C/I_B= 2A / 0.2A)

Complements the 2SB1184.

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25 ℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

1.5

P_C

℃

T_J

150

Storage Temperature

-55 to +150

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=50μA, I_C=0

I_CBO

I_EBO

V_CB=40V, I_E=0

V_EB=4V, I_C=0

μA

Emitter cut-off current

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=3V, I_C=500mA

390

Collector-emitter saturation voltage

Transition frequency

I_C=2A, I_B=200mA

V_CE=5V, I_C=500mA,f=30MHz

V_CB=10V, I_E=0, f=1MHz

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

82-180

120-270

180-390

Marking

A,Jun,2011

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