Datasheet > 2SD1760-Q

2SD1760-Q

更新时间： 2024-09-26 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		晶体管
页数	文件大小	规格书
3页	1211K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1760-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1760

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Low VCE (sat)

● Complementary to 2SB1184

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

4.5

150

Collector Power Dissipation

Junction Temperature

Tc=25°C

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

E= 0

Ic= 1 mA，I = 0

= 100 uA， I

C= 0

CBO

EBO

CB= 50 V , I

^EB= 4V , I

= 0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=2 A, I

=200 mA

0.5

=2 A, I

1.2

390

hFE

CE= 3V, I

CB= 10V, I

CE= 5V, I = -500mA,f=30MHz

C= 500 mA

120

Collector Output capacitance

Transition frequency

E= 0,f=1MHz

MHz

■ Classification of hfe

Type

2SD1760-Q

120-270

2SD1760-R

180-390

Range

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