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2SD1760TL/P PDF预览

2SD1760TL/P

更新时间: 2024-02-12 14:13:30
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 79K
描述
3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD1760TL/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.63外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSSO-G2JESD-609代码:e2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
功耗环境最大值:15 W认证状态:Not Qualified
表面贴装:YES端子面层:TIN COPPER
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):90 MHz
VCEsat-Max:1 VBase Number Matches:1

2SD1760TL/P 数据手册

 浏览型号2SD1760TL/P的Datasheet PDF文件第2页浏览型号2SD1760TL/P的Datasheet PDF文件第3页 
2SD1760 / 2SD1864  
Transistors  
Power Transistor (50V, 3A)  
2SD1760 / 2SD1864  
!Features  
!External dimensions (Units : mm)  
CE(sat)  
1) Low V  
.
2SD1760  
2SD1864  
CE(sat)  
V
= 0.5V (Typ.)  
2.5±0.2  
6.8±  
0.2  
+0.2  
2.3  
0.1  
C
B
(I /I = 2A / 0.2A)  
6.5±0.2  
C0.5  
+0.2  
5.1  
0.5±0.1  
0.1  
2) Complements the 2SB1184 / 2SB1243.  
0.65Max.  
0.65±0.1  
0.75  
0.9  
!Structure  
Epitaxial planar type  
NPN silicon transistor  
0.5±0.1  
0.55±0.1  
1.0±0.2  
2.3±0.2 2.3±0.2  
(1) (2) (3)  
(1) (2)  
(3)  
2.54  
2.54  
1.05  
0.45±0.1  
(1) Base  
(2) Collector  
(3) Emitter  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : CPT3  
EIAJ  
:
SC-63  
ROHM : ATV  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
60  
50  
5
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
V
V
3
A (DC)  
A (Pulse)  
Collector current  
I
C
4.5  
1
*
2
*
2SD1760  
2SD1864  
15  
1
W (Tc =25°C)  
Collector power  
dissipation  
P
C
W
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55~+150  
1 Single pulse, P  
W
= 100ms  
*
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.  

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