Datasheet > 2SD1761D

2SD1761D

更新时间： 2024-09-23 20:33:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	120K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SD1761D 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD1761D 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

2SD1761 TRANSISTOR (NPN)

TO-220F

1. BASE

FEATURES

Low collector saturation voltage:

_ce(sat)=0.3V(Typ.),I_C/I_B=2A/0.2A

2. COLLECTOR

3. EMITTER

Excellent current characteristics of DC current gain.

Large collector power dissipation: P_C=30W(T_C=25℃)

Complementary pair with 2SB1187

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

p_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50uA, I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50uA,I_C=0

I_CBO

I_EBO

V_CB=60V,I_E=0

Emitter cut-off current

V_EB=4V,I_C=0

DC current gain

h_FE(1)

V_CE(sat)

V_BE(sat)

f_T

V_CE=5V,I_C=0.5A

I_C=2A,I_B=0.2A

V_CE=5V,I_C=0.5A

V_CB=10V,I_E=0,f=1MHz

320

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

1.5

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

60-120

100-200

160-320

Range

中文翻译

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与2SD1761D相关器件

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2SD1761FY2	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD1761Y2	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD1762	ROHM	获取价格	Power Transistor (50V, 3A)
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