2SD1761

更新时间： 2024-02-08 05:21:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	80K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1761 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1761

DESCRIPTION

·With TO-220Fa package

·Low collector saturation voltage

·Complement to type 2SB1187

·Wide safe operating area

APPLICATIONS

·For low frequency power

amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

Collector current (DC)

Collector current-Peak

I_CM

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3

中文翻译

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与2SD1761相关器件

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2SD1761D	ISC	获取价格	Transistor
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2SD1761E	ISC	获取价格	暂无描述
2SD1761EY2	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD1761F	CJ	获取价格	Transistor
2SD1761FY2	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD1761Y2	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD1762	ROHM	获取价格	Power Transistor (50V, 3A)
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