Datasheet > 2SD1749Q

2SD1749Q

更新时间： 2024-10-14 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	40K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-221VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1749Q 数据手册

Power Transistors

2SD1751

Silicon NPN triple diffusion planar type

Unit: mm

7.0±0.3

3.0±0.2

3.5±0.2

For power amplification

Complementary to 2SB1170

Features

■

1.1±0.1

0.85±0.1

0.4±0.1

0.75±0.1

●

High forward current transfer ratio h_FEwhich has satisfactory

linearity

●

Low collector to emitter saturation voltage V_CE(sat)

2.3±0.2

●

I type package enabling direct soldering of the radiating fin to

4.6±0.4

the printed circuit board, etc. of small electronic equipment.

1:Base

2:Collector

3:Emitter

I Type Package

Absolute Maximum Ratings (T =25˚C)

■

Unit: mm

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

7.0±0.3

3.5±0.2

2.0±0.2

3.0±0.2

0 to 0.15

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.5

I_C

0.75±0.1

0.5 max.

0.9±0.1

1.1±0.1

Collector power T_C=25°C

0 to 0.15

P_C

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

2.3±0.2

T_stg

–55 to +150

4.6±0.4

I Type Package (Y)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CES

Conditions

min

typ

max

200

300

Unit

µA

V_CE= 60V, V_BE= 0

V_CE= 30V, I_B= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

Emitter cutoff current

V_EB= 6V, I_C= 0

Collector to emitter voltage

I_C= 30mA, I_B= 0

V_CE= 4V, I_C= 0.1A

V_CE= 4V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

250

1.2

V_BE

V_CE= 4V, I_C= 1A

Collector to emitter saturation voltage V_CE(sat)

I_C= 2A, I_B= 0.2A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

0.2

3.5

0.7

MHz

µs

I_C= 1A, I_B1= 0.1A, I_B2= – 0.1A

µs

^*h_FE2Rank classification

Rank

h_FE2

70 to 150

120 to 250

中文翻译

下载PDF

与2SD1749Q相关器件

型号	品牌	获取价格	描述	数据表
2SD1749R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SD1750	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington
2SD1750/2SD1750A	ETC	获取价格	2SD1750. 2SD1750A - NPN Transistor Darlington
2SD1750A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington
2SD1750AH	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD1750AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SD1750AQ	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SD1750AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SD1750ATX	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD1750H	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3