Datasheet > 2SD1747P

2SD1747P

更新时间： 2024-10-13 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	59K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1747P 数据手册

Power Transistors

2SD1747, 2SD1747A

Silicon NPN epitaxial planar type

For power switching

Unit: mm

7.0±0.3

3.0±0.2

3.5±0.2

Complementary to 2SB1177

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

1.1±0.1

0.85±0.1

0.4±0.1

●

Satisfactory linearity of foward current transfer ratio h_FE

0.75±0.1

●

Large collector current I_C

●

I type package enabling direct soldering of the radiating fin to

2.3±0.2

the printed circuit board, etc. of small electronic equipment.

4.6±0.4

1:Base

Absolute Maximum Ratings (T =25˚C)

■

2:Collector

3:Emitter

I Type Package

Parameter

Symbol

Ratings

Unit

Collector to

2SD1747

2SD1747A

2SD1747

130

Unit: mm

7.0±0.3

3.5±0.2

V_CBO

2.0±0.2

3.0±0.2

0 to 0.15

base voltage

Collector to

150

V_CEO

emitter voltage 2SD1747A

Emitter to base voltage

Peak collector current

Collector current

100

V_EBO

I_CP

2.5

0.75±0.1

0.5 max.

0.9±0.1

I_C

1.1±0.1

0 to 0.15

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

1.3

1:Base

2:Collector

3:Emitter

I Type Package (Y)

Junction temperature

Storage temperature

T_j

150

˚C

2.3±0.2

4.6±0.4

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 100V, I_E= 0

I_EBO

V_CEO

h_FE1

V_EB= 5V, I_C= 0

µA

Collector to emitter 2SD1747

100

I_C= 10mA, I_B= 0

voltage

2SD1747A

V_CE= 2V, I_C= 0.1A

Forward current transfer ratio

h_FE2

V_CE= 2V, I_C= 3A

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 5A, I_B= 0.25A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 10MHz

0.5

1.5

0.1

MHz

µs

I_C= 3A, I_B1= 0.3A, I_B2= – 0.3A,

V_CC= 50V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3 4

中文翻译

下载PDF

与2SD1747P相关器件

型号	品牌	获取价格	描述	数据表
2SD1747Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR
2SD1747R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7A I(C) \| TO-221VAR
2SD1747TX	PANASONIC	获取价格	暂无描述
2SD1748	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington
2SD1748/2SD1748A	ETC	获取价格	2SD1748. 2SD1748A - NPN Transistor Darlington
2SD1748A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington
2SD1748AH	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD1748AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD1748AQ	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD1748AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR