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2SD1724Q PDF预览

2SD1724Q

更新时间： 2024-11-23 14:47:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 46K
描述
TRANSISTOR,BJT,NPN,100V V(BR)CEO,3A I(C),TO-126

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2SD1724Q 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.58Is Samacsys：N
最大集电极电流 (IC)：3 A配置：Single
最小直流电流增益 (hFE)：70最高工作温度：150 °C
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
子类别：Other Transistors表面贴装：NO
标称过渡频率 (fT)：180 MHzBase Number Matches：1

2SD1724Q 数据手册

 浏览型号2SD1724Q的Datasheet PDF文件第2页浏览型号2SD1724Q的Datasheet PDF文件第3页浏览型号2SD1724Q的Datasheet PDF文件第4页 
Ordering number:ENN2047A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB1167/2SD1724  
100V/3A Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Relay drivers, high-speed inverters, converters.  
2043B  
Features  
[2SB1167/2SD1724]  
8.0  
2.0  
· Low collector-to-emitter saturation voltage.  
2.7  
4.0  
· High f .  
T
· Excellent linearity of h  
· Fast switching time.  
.
FE  
1.6  
0.8  
0.8  
0.6  
0.5  
1 : Emitter  
1
2
3
( ) : 2SB1167  
2 : Collector  
3 : Base  
SANYO : TO-126LP  
2.4  
4.8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(–)120  
(–)100  
(–)6  
(–)3  
(–)6  
1.2  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
20  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
(–)1  
Collector Cutoff Current  
I
V
=(–)100V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=(–)4V, I =0  
(–)1  
EBO  
C
h
1
=(–)5V, I =(–)0.5A  
70*  
40  
400*  
FE  
FE  
C
h
2
=(–)5V, I =(–)2A  
C
(130)  
180  
MHz  
MHz  
Gain-Bandwidth Product  
f
V
=(–)10V, I =(–)0.5A  
T
CE  
C
* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :  
Continued on next page.  
FE  
Rank  
Q
R
S
T
h
70 to 140  
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4  
1234

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与2SD1724Q相关器件

型号 品牌 获取价格 描述 数据表
2SD1724-Q ONSEMI

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
2SD1724R ONSEMI

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
2SD1724S ONSEMI

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 		3A, 100V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SD1724-S ONSEMI

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
2SD1724T ONSEMI

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 		3A, 100V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126LP, 3 PIN
2SD1724-T ONSEMI

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
2SD1725 SANYO

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 		100V/4A Switching Applications
2SD1725Q ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 4A I(C) | TO-126
2SD1725R ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 4A I(C) | TO-126
2SD1725S ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 4A I(C) | TO-126

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