Datasheet > 2SD1730

2SD1730

更新时间： 2024-11-23 06:17:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	222K
描述
Silicon NPN Power Transistor

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中文翻译

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2SD1730 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1730

DESCRIPTION

·High Voltage

·High Switching Speed

·Built-in damper diode

·Wide Area of Safe Operation

APPLICATIONS

·Designed for horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1500

700

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

I_CP

I_B

Collector Power Dissipation

@T_C=25℃

P_C

100

150

-55-150

℃

T_j

Junction Temperature

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

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2SD1733/P	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1733/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1733/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,