Datasheet > 2SD1733

2SD1733

更新时间： 2024-11-23 06:22:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SD1733 数据手册

SMD Type

Transistors

Power Transistor

2SD1733

TO-252

Unit: mm

Features

6.50^+0.15

-0.15

2.30^+0.1

-0.1

High VCEO, VCEO=80V .

High IC, IC=1A (DC) .

Good hFE linearity .

Low VCE (sat) .

5.30^+0.2

0.50^+0.8

-0.7

-0.2

0.127

max

0.80^+0.1

Epitaxial planer type

NPN silicon transistor

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

120

V^CEO

V^EBO

I^C

Collector current

I^C(Pulse) *

Collector power dissipation

Tc = 25

P^C

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

* Pw=20ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

120

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

BV^CBOIC=50ìA

BV^CEOIC=1mA

BV^EBOIE=50ìA

Collector cutoff current

Emitter cutoff current

I^CBO

I^EBO

h^FE

VCB=100V

VEB=4V

VCE=3V,IC=0.5A

ìA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

390

0.4

V^CE(sat)IC=500mA,IB=20mA

0.15

100

f^T

VCE=10V, IE= -50mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

MHz

Output capacitance

C^ob

hFE Classification

Rank

h^FE

82 180

120 270

180 390

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