Datasheet > 2SD1733R-AH

2SD1733R-AH

更新时间： 2024-10-15 14:54:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	741K
描述
功率三极管

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数据手册

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2SD1733R-AH 数据手册

2SD1733R-AH

NPN Silicon Epitaxial Planar Power Transistor

Features

• AEC-Q101 Qualified

• High V_CEO

• High Ic

• Good hFE linearity

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

• Low V_CE(sat)

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

• Low frequency power amplifier

Absolute Maximum Ratings

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current

Ta = 25

I_CM

Power Dissipation

Tc = 25

P_D

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

125

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

12.5

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 01/09/2023 Rev：01

12 3 4 5

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