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2SD1733 PDF预览

2SD1733

更新时间: 2024-11-22 22:52:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 92K
描述
Power Transistor (80V, 1A)

2SD1733 技术参数

是否Rohs认证:符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
风险等级:5.52Is Samacsys:N
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):82JESD-609代码:e2
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SD1733 数据手册

 浏览型号2SD1733的Datasheet PDF文件第2页浏览型号2SD1733的Datasheet PDF文件第3页浏览型号2SD1733的Datasheet PDF文件第4页 
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F  
Transistors  
Power Transistor (80V, 1A)  
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /  
2SD1381F  
!Features  
!External dimensions (Units : mm)  
CEO CEO  
1) High V  
, V  
=80V  
2SD1898  
C
C
2) High I , I =1A (DC)  
+0.2  
4.5  
0.1  
+0.2  
0.1  
1.5  
FE  
3) Good h linearity  
1.6±0.1  
CE  
4) Low V (sat)  
5) Complements the 2SB1260 /  
2SB1241 / 2SB1181  
(1) (2) (3)  
+0.1  
0.4  
0.05  
0.5±0.1  
3.0±0.2  
0.4±0.1  
1.5±0.1  
0.4±0.1  
1.5±0.1  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : MPT3  
EIAJ : SC-62  
!Structure  
Epitaxial planer type  
NPN silicon transistor  
Abbreviated symbol : DF  
2SD1768S  
4±0.2  
2SD1733  
2±0.2  
+
0.2  
2.3  
6.5  
±
0.2  
0.1  
C0.5  
+
0.2  
5.1  
0.1  
0.5±  
0.1  
+0.15  
0.05  
0.45  
0.65±0.1  
0.75  
0.9  
0.2 2.3±  
+0.15  
+0.4  
0.55  
±0.1  
0.45  
2.5  
0.5  
0.05  
0.1  
2.3±  
0.2  
5
1.0±0.2  
(1) (2) (3)  
(1) (2) (3)  
ROHM : CPT3  
EIAJ : SC-63  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : SPT  
EIAJ : SC-72  
(1) Emitter  
(2) Collector  
(3) Base  
2SD1863  
2SD1381F  
2.5±0.2  
7.8±0.2  
3.2±0.2  
6.8±0.2  
Front  
φ
3.3  
Back  
φ
3.19  
1.6  
C0.7  
0.65Max.  
0.95  
1.75  
0.5±0.1  
0.8  
(1) (2)  
(3)  
2.54  
2.54  
2.3±0.5  
2.3±0.5 0.7±0.1  
1.76±0.5  
1.05  
0.45±0.1  
(1) (2)(3)  
(1) Emitter  
(2) Collector  
(3) Base  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : ATV  
ROHM : TO-126FP  

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