Datasheet > 2SD0592Q

2SD0592Q

更新时间： 2024-11-20 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	72K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| TO-226

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中文翻译

获取价格

数据手册

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2SD0592Q 数据手册

Transistor

2SD0592, 2SD0592A (2SD592, 2SD592A)

Silicon NPN epitaxial planer type

For low-frequency output amplification

Unit: mm

Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A)

5.0 0.2

4.0 0.2

Features

Large collector power dissipation P_C.

Low collector to emitter saturation voltage V_CE(sat)

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to

2SD0592

2SD0592A

2SD0592

V_CBO

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

base voltage

Collector to

1.27

V_CEO

emitter voltage 2SD0592A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

1.5

2.54 0.15

Collector power dissipation

Junction temperature

Storage temperature

P_C

750

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SD0592

2SD0592A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD0592

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SD0592A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 500mA^*2

160

340

Forward current transfer ratio

V_CE= 5V, I_C= 1A^*2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 500mA, I_B= 50mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

0.2

0.85

200

0.4

1.2

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3 4

中文翻译

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与2SD0592Q相关器件

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2SD0592R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| TO-226
2SD0592S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| TO-226
2SD0601	PANASONIC	获取价格	Silicon NPN epitaxial planer type
2SD0601A	PANASONIC	获取价格	Silicon NPN epitaxial planer type
2SD0601A(2SD601A)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅
2SD0601A\|2SD601A	ETC	获取价格	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SD0601AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SOT-346
2SD0601AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SOT-346
2SD0601AS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SOT-346
2SD0602	PANASONIC	获取价格	Silicon NPN epitaxial planer type