Datasheet > 2SD0601A(2SD601A)

2SD0601A(2SD601A)

更新时间： 2022-01-18 16:27:00

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小信号デバイス－小信号トランジスタ－汎用低周波増幅

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2SD0601A(2SD601A) 数据手册

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Transistor

2SD0601A (2SD601A)

Silicon NPN epitaxial planer type

For general amplification

Unit: mm

Complementary to 2SB0709A (2SB709A)

2.8 ⁺^–0⁰^.^.³²

0.65 0.15

1.5 –⁺0⁰.^.0²5⁵

0.65 0.15

Features

High foward current transfer ratio h_FE

Low collector to emitter saturation voltage V_CE(sat)

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.1 to 0.3

0.4 0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

200

˚C

1:Base

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

2:Emitter

3:Collector

I_C

100

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

Marking symbol : Z

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 10V, I_B= 0

100

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

V_CE= 10V, I_C= 2mA

160

460

0.3

Forward current transfer ratio

h_FE2

V_CE= 2V, I_C= 100mA

I_C= 100mA, I_B= 10mA

V_CB= 10V, I_E= –2mA, f = 200MHz

V_CE= 10V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

V_CB= 10V, I_E= 0, f = 1MHz

Collector to emitter saturation voltage V_CE(sat)

0.1

Transition frequency

f_T

150

MHz

Noise voltage

C_ob

110

3.5

Collector output capacitance

^*h_FE1Rank classification

Rank

h_FE1

160 ~ 260

210 ~ 340

290 ~ 460

Note.) The Part number in the Parenthesis shows

conventional part number.

Marking Symbol

12 3

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