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2SD0592A|2SD592A PDF预览

2SD0592A|2SD592A

更新时间: 2022-01-18 16:26:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管信号器
页数 文件大小 规格书
4页 89K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

2SD0592A|2SD592A 数据手册

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Transistors  
2SD0592A (2SD592A)  
Silicon NPN epitaxial planar type  
For low-frequency output amplification  
Complementary to 2SB0621A (2SB621A)  
Unit: mm  
5.0 0.2  
4.0 0.2  
Features  
Large collector power dissipation PC  
Low collector-emitter saturation voltage VCE(sat)  
0.7 0.1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
+0.15  
+0.15  
0.45  
0.45  
–0.1  
–0.1  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
60  
+0.6  
+0.6  
2.5  
–0.2  
2.5  
–0.2  
50  
V
1
2 3  
5
V
1: Emitter  
2: Collector  
3: Base  
TO-92-B1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
1
1.5  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
750  
mW  
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
V
IE = 10 µA, IC = 0  
V
VCB = 20 V, IE = 0  
VCE = 10 V, IC = 500 mA  
VCE = 5 V, IC = 1 A  
0.1  
µA  
*
hFE1  
85  
50  
340  
hFE2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 500 mA, IB = 50 mA  
VBE(sat) IC = 500 mA, IB = 50 mA  
0.2  
0.85  
200  
0.4  
V
V
1.20  
fT  
VCB = 10 V, IE = −50 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
hFE1  
85 to 170  
120 to 240  
170 to 340  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: January 2003  
SJC00189CED  
1

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