Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
Unit: mm
5.0 0.2
4.0 0.2
■ Features
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
+0.15
+0.15
0.45
0.45
–0.1
–0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
60
+0.6
+0.6
2.5
–0.2
2.5
–0.2
50
V
1
2 3
5
V
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Collector current
IC
ICP
PC
Tj
1
1.5
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
A
750
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCB = 20 V, IE = 0
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
0.1
µA
*
hFE1
85
50
340
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
0.2
0.85
200
0.4
V
V
1.20
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00189CED
1