Datasheet > 2SCR542D

2SCR542D

更新时间： 2024-11-21 07:31:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
6页	490K
描述
Midium Power Transistors (30V / 5A)

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中文翻译

获取价格

数据手册

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2SCR542D 数据手册

Midium Power Transistors (30V / 5A)

2SCR542D

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

CPT3

6.5

5.1

(SC-63)

2.3

0.5

<SOT-428>

 Features

1) Low saturation voltage

_{CE (sat)}= 0.4V (Max.) (I_C/ I_B= 2A / 100mA)

2) High speed switching

0.75

0.65

2.3

0.9

(1)

2.3

(1) Base

(2) Collector

(3) Emitter

(2)

(3)

0.5

1.0

 Applications

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

Package

CPT3

(2)

Type

Code

Basic ordering unit (pieces) 2500

(1)

Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

(1) Base

(2) Collector

(3) Emitter

V_CBO

V_CEO

V_EBO

I_C

(3)

Collector current

Pulsed

I_CP

P_D

T_j

°C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Mounted on a substrate

*3 T_C=25°C

www.rohm.com

2010.12 - Rev.A

1/5

12 3 4 5 6

中文翻译

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