2SCR522UB

更新时间： 2024-11-21 07:31:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	166K
描述
General purpose transistor(20V,0.2A)

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中文翻译

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数据手册

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2SCR522UB 数据手册

General purpose transistor(20V,0.2A)

2SCR522M / 2SCR522EB / 2SCR522UB

Structure

Dimensions (Unit : mm)

NPN silicon epitaxial planar transistor

VMT3

Features

Complements the 2SAR522M / 2SAR522EB / 2SAR522UB.

Abbreviated symbol : NC

Applications

Switch, LED driver

EMT3F

(3)

Packaging specifications

Package

VMT3

Taping

T2L

EMT3F

Taping

UMT3F

Taping

(1)

(2)

Packaging Type

Code

Abbreviated symbol : NC

Type

UMT3F

2.0

Basic ordering

unit (pieces)

0.9

0.32

8000

3000

(3)

2SCR522M

2SCR522EB

2SCR522UB

(1)

(2)

0.13

0.65 0.65

1.3

Abbreviated symbol : NC

 Absolute maximum ratings (Ta=25C)

Inner circuit

Limits

Symbol

V^CBO

V^CEO

VEBO

I^C

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

(3)

(1)

(1) Base

(2) Emitter

(3) Collector

200

400

150

200

°C

Collector current

∗1

ICP

(2)

2SCR522M,2SCR522EB

∗2

Power

P^D

dissipation

2SCR522UB

T^j

150

Junction temperature

−55 to +150

°C

T^stg

Range of storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

Conditions

−

=1mA

C=50μA

−

=50μA

CBO

EBO

CE(sat)

−

120

−

0.1

0.30

560

−

μA

CB=20V

EB=5V

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

=100mA, I

B=10mA

0.12

−

400

−

MHz

CE=2V, I =1mA

Transition frequency

CE=10V, I

CB=10V, I

=−10mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2010.09 - Rev.A

1/2

12 3

中文翻译

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