Datasheet > 2SCR523EB

2SCR523EB

更新时间： 2024-11-21 07:31:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	168K
描述
General purpose transistor(50V,0.1A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SCR523EB 数据手册

General purpose transistor(50V,0.1A)

2SCR523M / 2SCR523EB / 2SCR523UB

Structure

NPN silicon epitaxial planar transistor

Dimensions (Unit : mm)

VMT3

Features

1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB.

Abbreviated symbol : NB

Applications

Switch, LED driver

EMT3F

(3)

Packaging specifications

Package

VMT3

Taping

T2L

EMT3F

Taping

UMT3F

Taping

(1)

(2)

Packaging Type

Code

Abbreviated symbol : NB

Type

UMT3F

2.0

Basic ordering

unit (pieces)

0.9

0.32

8000

3000

(3)

2SCR523M

2SCR523EB

2SCR523UB

(1)

(2)

0.13

0.65 0.65

1.3

Abbreviated symbol : NB

 Absolute maximum ratings (Ta=25C)

Inner circuit

Limits

Symbol

V^CBO

V^CEO

VEBO

I^C

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

(3)

(1)

(1) Base

(2) Emitter

(3) Collector

100

200

150

200

150

°C

Collector current

∗1

ICP

(2)

2SCR523M,2SCR523EB

∗2

P^D

Power dissipation

2SCR523UB

T^j

Junction temperature

−55 to +150

°C

T^stg

Range of storage temperature

∗1 Pw=1mS Single pulse

∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

BV^CEO

BVCBO

BVEBO

Min.

Typ. Max.

Unit

Conditions

−

=1mA

=50μA

−

=50μA

CB=50V

EB=5V

CBO

EBO

CE(sat)

−

120

−

0.1

0.30

560

−

μA

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

=50mA, I

=5mA

0.10

−

350

1.6

−

MHz

CE=6V, I =1mA

Transition frequency

CE=10V, I

CB=10V, I

=−10mA, f=100MHz

=0A, f=1MHz

Output capacitance

Cob

−

www.rohm.com

2010.09 - Rev.A

1/2

12 3

中文翻译

下载PDF

与2SCR523EB相关器件

型号	品牌	获取价格	描述	数据表
2SCR523EBTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F,
2SCR523M	ROHM	获取价格	General purpose transistor(50V,0.1A)
2SCR523MT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3
2SCR523UB	ROHM	获取价格	General purpose transistor(50V,0.1A)
2SCR523UB	RECTRON	获取价格	Package / Case : SOT-323FL;Mounting Style : SMD/SMT;Power Rating : 0.2 W;Transistor Polari
2SCR533D	ROHM	获取价格	Midium Power Transistors (50V / 3A)
2SCR533P	ROHM	获取价格	Midium Power Transistors (50V / 3A)
2SCR533P_09	ROHM	获取价格	Midium Power Transistors (50V / 3A)
2SCR533P5	ROHM	获取价格	2SCR533P5是低VCE(sat)的晶体管，适合高速开关的低频放大用途。
2SCR533P5T100	ROHM	获取价格	Small Signal Bipolar Transistor,