是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-85 |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 13 weeks |
风险等级: | 1.71 | Samacsys Description: | NPN General Purpose Amplification Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-F3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 350 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SCR523EBTL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F, | |
2SCR523M | ROHM |
获取价格 |
General purpose transistor(50V,0.1A) | |
2SCR523MT2L | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, VMT3, 3 | |
2SCR523UB | ROHM |
获取价格 |
General purpose transistor(50V,0.1A) | |
2SCR533D | ROHM |
获取价格 |
Midium Power Transistors (50V / 3A) | |
2SCR533P | ROHM |
获取价格 |
Midium Power Transistors (50V / 3A) | |
2SCR533P_09 | ROHM |
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Midium Power Transistors (50V / 3A) | |
2SCR533P5 | ROHM |
获取价格 |
2SCR533P5是低VCE(sat)的晶体管,适合高速开关的低频放大用途。 | |
2SCR533P5T100 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, | |
2SCR533PFRAT100 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 |