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2SC5754-FB-A

更新时间： 2024-02-02 11:28:23

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管射频光电二极管输出元件放大器
页数	文件大小	规格书
13页	89K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, THIN, SUPER MINI MOLD PACKAGE-4

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技术参数
数据手册

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2SC5754-FB-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.72
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.5 A
基于收集器的最大容量：	1.5 pF	集电极-发射极最大电压：	5 V
配置：	SINGLE	最高频带：	S BAND
JESD-30 代码：	R-PDSO-F4	JESD-609代码：	e6
元件数量：	1	端子数量：	4
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	20000 MHz
Base Number Matches：	1

2SC5754-FB-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5754

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

•

Ideal for 460 MHz to 2.4 GHz medium output power amplification

P^{O (1 dB)}= 26.0 dBm TYP. @ V^CE= 3.6 V, f = 1.8 GHz, Pⁱⁿ= 15 dBm

High collector efficiency: η^C= 60%

UHS0-HV technology (f^T= 25 GHz) adopted

High reliability through use of gold electrodes

Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5754

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5754-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10008EJ02V0DS (2nd edition)

Date Published March 2003 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2003

12 3 4 5 6 7...13

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与2SC5754-FB-A相关器件

型号	品牌	描述	获取价格	数据表
2SC5754-T2	NEC	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN TH	获取价格
2SC5754-T2	RENESAS	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4	获取价格
2SC5754-T2-A	RENESAS	2SC5754-T2-A	获取价格
2SC5754-T2FB	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, THIN, SUPE	获取价格
2SC5754-T2-FB	RENESAS	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4	获取价格
2SC5754-T2FB-A	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, T	获取价格