Datasheet > 2SC5755_04

2SC5755_04

更新时间： 2024-09-30 07:31:15

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	132K
描述
High-Speed Switching Applications

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2SC5755_04 数据手册

2SC5755

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5755

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.2 A)

Low collector-emitter saturation voltage: V

= 0.12 V (max)

CE (sat)

High-speed switching: t = 25 ns (typ.)

Maximum Ratings

(Ta 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Pulse

3.5

200

JEDEC

JEITA

―

500

Collector power

dissipation

(Note)

t = 10 s

750

TOSHIBA

2-3S1C

Junction temperature

150

°C

Weight: 0.01 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm²)

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Symbol

Test Condition

= 20 V, I = 0

Min

Typ.

Max

Unit

⎯

100

⎯

CBO

Emitter cut-off current

= 7 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

400

200

⎯

(BR) CEO

(1)

(2)

= 2 V, I = 0.2 A

⎯

1000

⎯

DC current gain

= 2 V, I = 0.6 A

⎯

Collector-emitter saturation voltage

Base-emitter saturation voltage

Rise time

= 0.6 A, I = 12 mA

⎯

0.12

1.10

⎯

CE (sat)

BE (sat)

= 0.6 A, I = 12 mA

⎯

215

See Figure 1.

Switching time

6 V, R = 10 Ω

Storage time

Fall time

⎯

CC ≈

stg

= −I = 12 mA

⎯

2004-07-01

12 3 4 5

中文翻译

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