2SC5761-FB-A

更新时间： 2024-09-30 13:04:19

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
14页	82K
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中文翻译

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数据手册

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2SC5761-FB-A 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

2SC5761

NPN SiGe RF TRANSISTOR FOR

LOW NOISE HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

•

Ideal for low noise high-gain amplification

NF = 0.9 dB TYP. @ V^CE= 2 V, I^C= 5 mA, f = 2 GHz

•

Maximum stable power gain: MSG = 20.0 dB TYP. @ V^CE= 2 V, I^C= 20 mA, f = 2 GHz

SiGe technology (f^T= 60 GHz, f^max= 60 GHz)

Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5761

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5761-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

8.0

2.3

1.2

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

P^tot

T^j

150

−65 to +150

T^stg

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

THERMAL RESISTANCE

Parameter

Symbol

R^{th (j-c)}

Value

150

Unit

°C/W

Junction to Case Resistance

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10212EJ02V0DS (2nd edition)

Date Published May 2003 CP(K)

The mark ! shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2003

12 3 4 5 6 7...14

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与2SC5761-FB-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5761-T2	NEC	获取价格	NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE S
2SC5761-T2	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5761-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,2.3V V(BR)CEO,35MA I(C),TSOP
2SC5761-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN
2SC5761-T2-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5761-T2FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN
2SC5763	ISC	获取价格	Silicon NPN Power Transistors
2SC5763	SANYO	获取价格	Switching Regulator Applications
2SC5763M	SANYO	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 7A I(C) \| TO-220AB
2SC5763N	SANYO	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 7A I(C) \| TO-220AB