是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, THIN, SUPER MINI MOLD PACKAGE-4 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.5 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 5 V | 配置: | SINGLE |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-F4 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5755 | TOSHIBA |
获取价格 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications | |
2SC5755(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR NPN 10V 2A TSM | |
2SC5755_04 | TOSHIBA |
获取价格 |
High-Speed Switching Applications | |
2SC5757 | RENESAS |
获取价格 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier | |
2SC5757 | HITACHI |
获取价格 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier | |
2SC5757WE-TR-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier | |
2SC5758 | RENESAS |
获取价格 |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier | |
2SC5758 | HITACHI |
获取价格 |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier | |
2SC5758WF-TR-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier | |
2SC5759 | HITACHI |
获取价格 |
Silicon NPN Epitaxial UHF / VHF wide band amplifier |