Datasheet > 2SC5738_04

2SC5738_04

更新时间： 2024-02-06 11:36:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	130K
描述
High-Speed Switching Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5738_04 数据手册

2SC5738

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5738

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.5 A)

Low collector-emitter saturation voltage: V

= 0.15 V (max)

CE (sat)

High-speed switching: t = 90 ns (typ.)

Maximum Ratings

(Ta 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

3.5

Collector current

Base current

Pulse

6.0

350

JEDEC

JEITA

―

625

Collector power

dissipation

(Note)

t = 10 s

1000

150

TOSHIBA

2-3S1A

Junction temperature

°C

Weight: 0.01 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm²)

Electrical Characteristics

(Ta 25°C)

Characteristics

Symbol

Test Condition

= 40 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

⎯

100

⎯

CBO

Emitter cut-off current

= 7 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

400

200

⎯

(BR) CEO

(1)

(2)

= 2 V, I = 0.5 A

⎯

1000

⎯

DC current gain

= 2 V, I = 1.6 A

⎯

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

= 1.6 A, I = 32 mA

⎯

0.15

1.10

⎯

CE (sat)

BE (sat)

= 1.6 A, I = 32 mA

⎯

= 10 V, I = 0, f = 1 MHz

⎯

100

350

⎯

See Figure 1.

∼

−

Switching time

12 V, R = 7.5 Ω

Storage time

Fall time

⎯

stg

= −I = 53 mA

⎯

2004-07-01

12 3 4 5

中文翻译

下载PDF

与2SC5738_04相关器件

型号	品牌	获取价格	描述	数据表
2SC5739	PANASONIC	获取价格	Silicon NPN epitaxial planar type
2SC5739P	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC5741	ETC	获取价格	Discrete
2SC5741-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5742-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5742-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5745	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUP