2SC5739

更新时间： 2024-09-24 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	79K
描述
Silicon NPN epitaxial planar type

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中文翻译

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2SC5739 数据手册

Power Transistors

2SC5739

Silicon NPN epitaxial planar type

Unit: mm

4.6 0.2

Power supply for Audio & Visual equipments

such as TVs and VCRs

9.9 0.3

2.9 0.2

φ 3.2 0.1

Industrial equipments such as DC-DC converters

■ Features

• High-speed switching (t_stg: storage time/t_f: fall time is short)

• Low collector-emitter saturation voltage V_CE(sat)

• Superior forward current transfer ratio h_FElinearity

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

1.4 0.2

1.6 0.2

2.6 0.1

0.8 0.1

0.55 0.15

2.54 0.30

5.08 0.50

■ Absolute Maximum Ratings T_C= 25°C

1: Base

2: Collector

3: Emitter

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

TO-220D-A1 Package

Internal Connection

Collector current

I_C

I_CP

P_C

Peak collector current ^*

Collector power dissipation

T_a= 25°C

2.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note) : Non-repetitive peak collector current

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= 10 mA, I_B= 0

V_CB= 60 V, I_E= 0

V_CE= 60 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 3 A

100

µA



I_CEO

I_EBO

h_FE1

120

320

h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= 3 A, I_B= 0.375 A

0.5

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.1 A, f = 10 MHz

180

0.2

I_C= 1 A, Resistance loaded

I_B1= 0.1 A, I_B2= − 0.1 A

V_CC= 50 V

0.3

Storage time

0.55

0.10

0.70

0.15

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

120 to 250

160 to 320

Publication date: February 2003

SJD00288AED

12 3

中文翻译

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与2SC5739相关器件

型号	品牌	获取价格	描述	数据表
2SC5739P	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC5741	ETC	获取价格	Discrete
2SC5741-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5741-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPE
2SC5742-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5742-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5745	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUP
2SC5745	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR

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