Datasheet > 2SC5746(NE819M13)

2SC5746(NE819M13)

更新时间： 2024-01-07 04:29:57

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
22页	94K
描述
Discrete

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5746(NE819M13) 数据手册

浏览型号2SC5746(NE819M13)的Datasheet PDF文件第2页

浏览型号2SC5746(NE819M13)的Datasheet PDF文件第3页

浏览型号2SC5746(NE819M13)的Datasheet PDF文件第4页

浏览型号2SC5746(NE819M13)的Datasheet PDF文件第5页

浏览型号2SC5746(NE819M13)的Datasheet PDF文件第6页

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5746

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation, low phase distortion

Ideal for OSC applications

3-pin lead-less minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5746

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

2SC5746-T3

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

5.5

1.5

100

°C

tot ^Note

140

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10007EJ02V0DS (2nd edition)

Date Published January 2002 CP(K)

Printed in Japan

The mark • shows major revised points.

NEC Compound Semiconductor Devices 2001, 2002

12 3 4 5 6 7...22

中文翻译

下载PDF

与2SC5746(NE819M13)相关器件

型号	品牌	获取价格	描述	数据表
2SC5746-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5746-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5746-T3	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
2SC5746-T3	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5746-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5746-T3-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
2SC5746-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, LEADLESS M
2SC5748	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5750	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 6V V(BR)CEO \| 50MA I(C) \| SOT-343R
2SC5750(NE67718)	ETC	获取价格	Discrete