DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5750
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
4-PIN SUPER MINIMOLD
FEATURES
•
•
•
•
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Ideal for medium output power amplification
PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
HFT3 technology (fT = 12 GHz) adopted
High reliability through use of gold electrodes
4-pin super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5750
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
2SC5750-T1
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
9.0
6.0
V
2.0
V
50
mA
mW
°C
°C
P
tot Note
200
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15656EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
2001
©