Datasheet > 2SC5752(NE67818)

2SC5752(NE67818)

更新时间： 2022-01-19 13:12:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
20页	88K
描述
Discrete

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2SC5752(NE67818) 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5752

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)

4-PIN SUPER MINIMOLD

FEATURES

•

Ideal for medium output power amplification

P^{O (1 dB)}= 18.0 dBm TYP. @ V^CE= 2.8 V, f = 1.8 GHz, Pⁱⁿ= 7 dBm

HFT3 technology (f^T= 12 GHz) adopted

High reliability through use of gold electrodes

4-pin super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5752

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape

2SC5752-T1

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

9.0

Unit

6.0

2.0

100

°C

tot ^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15658EJ1V0DS00 (1st edition)

Date Published August 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...20

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2SC5752-FB-A	NEC	暂无描述	获取价格
2SC5752-T1	NEC	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMO	获取价格
2SC5752-T1	RENESAS	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-4	获取价格
2SC5752-T1-A	RENESAS	暂无描述	获取价格