生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1.5 pF | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 110 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 5200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5376 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING AP | |
2SC5376_07 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications | |
2SC5376A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 | |
2SC5376-A(TE85L) | TOSHIBA |
获取价格 |
2SC5376-A(TE85L) | |
2SC5376-A(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,400MA I(C),SOT-416 | |
2SC5376B | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 | |
2SC5376-B | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General | |
2SC5376-B(TE85L) | TOSHIBA |
获取价格 |
2SC5376-B(TE85L) | |
2SC5376-B(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,400MA I(C),SOT-416 | |
2SC5376CT-A | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP Genera |