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2SC5375A PDF预览

2SC5375A

更新时间: 2024-01-18 10:12:05
品牌 Logo 应用领域
三洋 - SANYO 振荡器晶体放大器晶体管
页数 文件大小 规格书
6页 56K
描述
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifier Applications

2SC5375A 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1.5 pF集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):110
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5200 MHz
Base Number Matches:1

2SC5375A 数据手册

 浏览型号2SC5375A的Datasheet PDF文件第2页浏览型号2SC5375A的Datasheet PDF文件第3页浏览型号2SC5375A的Datasheet PDF文件第4页浏览型号2SC5375A的Datasheet PDF文件第5页浏览型号2SC5375A的Datasheet PDF文件第6页 
Ordering number : ENA1088  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
VHF to UHF Band OSC,  
High-Frequency Amplifier Applications  
2SC5375A  
Features  
High gain  
: S21e2=10dB typ (f=1GHz).  
High cut-off frequency : f =5.2GHz typ.  
T
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
20  
10  
CBO  
CEO  
EBO  
V
2
V
I
100  
150  
150  
mA  
mW  
°C  
°C  
C
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
10  
Collector Cutoff Current  
Emitter Cutoff Current  
I
I
V
V
V
V
V
V
V
V
V
=10V, I =0A  
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
CE  
CE  
E
=1V, I =0A  
EBO  
C
h
h
1
2
=3V, I =7mA  
110  
180  
FE  
C
DC Current Gain  
=3V, I =30mA  
100  
3
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
Reverse Transfer Capacitance  
Forward Transfer Gain  
Noise Figure  
f
=3V, I =7mA  
C
5.2  
1.0  
0.7  
10  
GHz  
pF  
T
Cob  
Cre  
=3V, f=1MHz  
=3V, f=1MHz  
1.5  
2.5  
pF  
2
S21e  
=3V, I =7mA, f=1GHz  
8
dB  
C
NF  
=3V, I =7mA, f=1GHz  
1.4  
dB  
C
Marking : NA  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
O2809AB TK IM TC-00002119  
No. A1088-1/6  

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