生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 最大集电极电流 (IC): | 0.15 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1.3 W | 子类别: | Other Transistors |
表面贴装: | YES | 标称过渡频率 (fT): | 3000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5347AE | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89 | |
2SC5347AE-TD-E | SANYO |
获取价格 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications | |
2SC5347AE-TD-E | ONSEMI |
获取价格 |
射频晶体管,NPN 单 PCP,12 V,150 mA,fT = 4.7 GHz | |
2SC5347AF-TD-E | SANYO |
获取价格 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications | |
2SC5347AF-TD-E | ONSEMI |
获取价格 |
射频晶体管,NPN 单 PCP,12 V,150 mA,fT = 4.7 GHz | |
2SC535 | HITACHI |
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Silicon NPN Epitaxial Planar | |
2SC535 | CDIL |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC535 | RENESAS |
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Silicon NPN Epitaxial Planar | |
2SC535 | SWST |
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小信号晶体管 | |
2SC5351 | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER |