Datasheet > 2SC5347AE

2SC5347AE

更新时间： 2024-01-24 00:35:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	67K
描述
TRANSISTOR,BJT,NPN,12V V(BR)CEO,150MA I(C),SOT-89

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2SC5347AE 数据手册

Ordering number : ENA1087

2SC5347A

SANYO Sem iconductors

DATA S HEET

NPN Epitaxial Planar Silicon Transistor

High-Frequency Semi-Power Output Stage,

Low-Noise Medium Output Amplifier Applications

2SC5347A

Features

•

High-frequency medium output amplification

(V =5V, I =50mA)

: f =4.7GHz typ (f=1GHz).

:⏐S21e⏐²=8dB typ (f=1GHz).

: NF=1.8dB typ (f=1GHz).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

150

1.3

150

Collector Dissipation

When mounted on ceramic substrate (900mm²✕0.8mm)

Junction Temperature

Storage Temperature

°C

Tstg

--55 to +150

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

www.semiconductor-sanyo.com/network

D0308AB MS IM TC-00001778

No. A1087-1/6

12 3 4 5 6

中文翻译

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与2SC5347AE相关器件

型号	品牌	获取价格	描述	数据表
2SC5347AE-TD-E	SANYO	获取价格	High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
2SC5347AE-TD-E	ONSEMI	获取价格	射频晶体管，NPN 单 PCP，12 V，150 mA，fT = 4.7 GHz
2SC5347AF-TD-E	SANYO	获取价格	High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
2SC5347AF-TD-E	ONSEMI	获取价格	射频晶体管，NPN 单 PCP，12 V，150 mA，fT = 4.7 GHz
2SC535	HITACHI	获取价格	Silicon NPN Epitaxial Planar
2SC535	CDIL	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic
2SC535	RENESAS	获取价格	Silicon NPN Epitaxial Planar
2SC535	SWST	获取价格	小信号晶体管
2SC5351	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER
2SC5351_06	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type High-Voltage Switching Applications

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