Datasheet > 2SC5200L-O-T3N-T

2SC5200L-O-T3N-T

更新时间： 2024-02-27 03:05:47

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	260K
描述
Power Bipolar Transistor,

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技术参数
数据手册

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2SC5200L-O-T3N-T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SC5200L-O-T3N-T 数据手册

2SC5200

NPN EPITAXIAL SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

Collector Current vs.

Base-Emitter Voltage

Collector Current vs.

Collector-Emitter Voltage

COMMON EMITTER

T_C=25°C

COMMON EMITTER

800

V_CE= 5V

600

400

300

250

200

150

100

I_B= 10mA

T_C=100°C

-25

0.8

Base-Emitter Voltage, V_BE(V)

0.4

1.2

1.6

2.0

Collector-Emitter Voltage, V_CE(V)

Collector-Emitter Saturation Voltage vs.

Collector Current

DC Current Gain vs. Collector Current

300

T_C=100℃

100

-25

0.3

0.1

T_C=100℃

-25

COMMON EMITTER

I_C/ I_B= 10

0.03

0.01

COMMON EMITTER

I_C/ I_B= 10

100

0.1

100

0.01

0.1

0.01

Collector Current, I_C(A)

Safe Operating Area

_CMAX. (PULSED)

30 ^I

I_CMAX.

1ms

(CONTINUOUS)

10ms

5^{DC OPERATION}

100ms

3^T^C^=25°C

0.5

0.3

※

SINGLE NONREPETITIVE

PULSE T_C= 25°C

CURVES MUST BE

DERATED LINEARLY

WITH INCREASE IN

TEMPERATURE.

V_CEO

MAX.

0.1

0.05

0.03

100

300 1000

Collector-Emitter Voltage, V_CE(V)

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

QW-R214-005.D

www.unisonic.com.tw

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