Datasheet > 2SC5200L-O-T3N-T

2SC5200L-O-T3N-T

更新时间： 2024-02-04 21:10:48

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	260K
描述
Power Bipolar Transistor,

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技术参数
数据手册

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2SC5200L-O-T3N-T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

2SC5200L-O-T3N-T 数据手册

2SC5200

NPN EPITAXIAL SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

230

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

230

Base Current

I_B

1.5

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

P_C

150

°C

T_J

+150

-55 ~ 150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_{(BR) CEO}

V_CE(SAT)

V_BE

TEST CONDITIONS

I_C= 50mA, I_B=0

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base -Emitter Voltage

230

I_C= 8A_,I_B= 0.8A

0.4

1.0

3.0

1.5

5.0

160

V_CE= 5V, I_C= 7A

V_CB= 230V, I_E=0

V_EB= 5V, I_C=0

Collector Cut-off Current

I_CBO

μA

Emitter Cut-off Current

I_EBO

h_FE1

V_CE= 5V, I_C= 1A

V_CE= 5V, I_C= 7A

V_CE= 5V, I_C= 1A

V_CB= 10V, I_E=0, f=1MHz

DC Current Gain

h_FE2

Transition Frequency

f_T

MHz

Collector Output Capacitance

C_OB

200



CLASSIFICATION OF h_FE1

RANK

Range

55 ~ 110

80 ~ 160

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

QW-R214-005.D

www.unisonic.com.tw

123 4

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