2SC5197-O

更新时间： 2024-11-23 13:01:15

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
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4页	121K
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2SC5197-O 数据手册

2SC5197

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5197

Power Amplifier Applications

Unit: mm

•

Complementary to 2SA1940

Suitable for use in 55-W high fidelity audio amplifier’s output stage

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

120

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.8

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

150

°C

JEDEC

JEITA

―

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-16C1A

Weight: 4.7 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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