2SC5198-O(Q)

更新时间： 2024-11-23 13:04:19

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东芝 - TOSHIBA		放大器功率放大器
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2SC5198-O(Q) 数据手册

2SC5198

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5198

Power Amplifier Applications

Unit: mm

•

High breakdown voltage: V

= 140 V (min)

CEO

Complementary to 2SA1941

Suitable for use in 70-W high fidelity audio amplifier’s output stage

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

140

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

(Tc = 25°C)

100

JEDEC

JEITA

―

Junction temperature

Storage temperature range

150

°C

stg

−55 to 150

TOSHIBA

2-16C1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 4.7 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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2SC5198-O(Q) 替代型号

型号	品牌	替代类型	描述	数据表
FJA4310OTU	FAIRCHILD	功能相似	NPN Epitaxial Silicon Transistor
2STC4468	STMICROELECTRONICS	功能相似	High power NPN epitaxial planar bipolar transistor

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