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2SC5200 PDF预览

2SC5200

更新时间: 2024-11-23 04:26:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 214K
描述
NPN Epitaxial Silicon Transistor

2SC5200 数据手册

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March 2008  
2SC5200/FJL4315  
NPN Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = 15A.  
High Power Dissipation : 150watts.  
High Frequency : 30MHz.  
TO-264  
1.Base 2.Collector 3.Emitter  
1
High Voltage : VCEO=230V  
Wide S.O.A for reliable operation.  
Excellent Gain Linearity for low THD.  
Complement to 2SA1943/FJL4215.  
Thermal and electrical Spice models are available.  
Same transistor is also available in:  
-- TO3P package, 2SC5242/FJA4313 : 130 watts  
-- TO220 package, FJP5200 : 80 watts  
-- TO220F package, FJPF5200 : 50 watts  
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
230  
230  
5
V
V
V
A
A
15  
IB  
1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
150  
1.04  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
0.83  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2008 Fairchild Semiconductor Corporation  
2SC5200/FJL4315 Rev. A2  
www.fairchildsemi.com  
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