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2SC5198-O PDF预览

2SC5198-O

更新时间: 2024-11-23 13:04:19
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
4页 122K
描述
TRANSISTOR 10 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power

2SC5198-O 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:100 W最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzVCEsat-Max:2 V
Base Number Matches:1

2SC5198-O 数据手册

 浏览型号2SC5198-O的Datasheet PDF文件第2页浏览型号2SC5198-O的Datasheet PDF文件第3页浏览型号2SC5198-O的Datasheet PDF文件第4页 
2SC5198  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5198  
Power Amplifier Applications  
Unit: mm  
High breakdown voltage: V  
= 140 V (min)  
CEO  
Complementary to 2SA1941  
Suitable for use in 70-W high fidelity audio amplifier’s output stage  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
140  
140  
5
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
10  
1
C
Base current  
I
B
Collector power dissipation  
(Tc = 25°C)  
P
100  
W
C
JEDEC  
JEITA  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
T
stg  
55 to 150  
TOSHIBA  
2-16C1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 4.7 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-10  

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