5秒后页面跳转
2SC5103_09 PDF预览

2SC5103_09

更新时间: 2024-11-24 06:19:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关晶体管
页数 文件大小 规格书
4页 165K
描述
High speed switching transistor (60V, 5A)

2SC5103_09 数据手册

 浏览型号2SC5103_09的Datasheet PDF文件第2页浏览型号2SC5103_09的Datasheet PDF文件第3页浏览型号2SC5103_09的Datasheet PDF文件第4页 
High speed switching transistor (60V, 5A)  
2SC5103  
Features  
Dimensions (Unit : mm)  
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)  
2) High speed switching (tf : Typ. 0.1 s at IC = 3A)  
3) Wide SOA. (safe operating area)  
4) Complements the 2SA1952.  
5.5  
0.9  
1.5  
C0.5  
0.8Min.  
1.5  
(1) Base  
(2) Collector  
(3) Emitter  
2.5  
Absolute maximum ratings (Ta=25C)  
ROHM : CPT3  
EIAJ : SC-63  
9.5  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
100  
Unit  
V
V
VCBO  
VCEO  
VEBO  
60  
5
5
10  
1
10  
V
A(DC)  
A(Pulse)  
W
W(Tc=25°C)  
°C  
Collector current  
IC  
Collector power  
dissipation  
PC  
Junction temperature  
Storage temperature  
Single pulse Pw=100ms  
Tj  
Tstg  
150  
55 to +150  
°C  
Packaging specifications and hFE  
Type  
Package  
hFE  
Code  
Basic ordering unit (pieces)  
2SC5103  
CPT3  
Q
TL  
2500  
Electrical characteristics (Ta=25C)  
Typ.  
Conditions  
Symbol  
Min.  
Max.  
Unit  
Parameter  
0.15  
BVCBO  
BVCEO  
BVEBO  
V
V
V
μA  
μA  
V
V
V
V
I
I
I
V
V
I
I
I
I
V
V
V
V
C
C
E
=
=
=
50μA  
1mA  
50μA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
100  
60  
5
120  
40  
10  
10  
0.3  
0.5  
1.2  
1.5  
270  
0.3  
1.5  
0.3  
I
CBO  
CB  
=
=
100V  
5V  
I
EBO  
Emitter cutoff current  
EB  
C
/I  
/I  
/I  
/I  
B
=
3A/0.15A  
4A/0.2A  
3A/0.15A  
4A/0.2A  
V
CE(sat)  
BE(sat)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current transfer ratio  
C
C
C
B
B
B
=
=
=
V
CE/I  
C
=
=
2V/1A  
2V/3A  
hFE  
MHz  
CE/I  
C
f
T
120  
80  
0.1  
Transition frequency  
Output capacitance  
Turn-on time  
Storage time  
Fall time  
CB  
CE  
=
10V , I  
E
= −0.5A , f  
0A , f 1MHz  
10Ω  
0.15A  
= 30MHz  
Cob  
on  
stg  
pF  
μs  
μs  
μs  
=
10V , I  
E
=
=
t
I
I
V
C
= 3A , RL =  
=
t
B1  
IB2  
=
t
f
CC 30V  
Measured using pulse current.  
www.rohm.com  
2009.12 - Rev.A  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

与2SC5103_09相关器件

型号 品牌 获取价格 描述 数据表
2SC5103F5 ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252
2SC5103F5/P ROHM

获取价格

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
2SC5103F5/PQ ROHM

获取价格

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
2SC5103F5/Q ROHM

获取价格

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
2SC5103F5P ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252
2SC5103F5Q ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252
2SC5103F5TLPQ ROHM

获取价格

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
2SC5103F5TLQ ROHM

获取价格

Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
2SC5103P ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR
2SC5103Q ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR