Datasheet > 2SC4959-T1

2SC4959-T1

更新时间： 2024-11-11 22:25:27

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管
页数	文件大小	规格书
6页	49K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

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数据手册

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2SC4959-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4959

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

FEATURES

PACKAGE DIMENSIONS

• Low Noise, High Gain

• Low Voltage Operation

• Low Feedback Capacitance

Cre = 0.4 pF TYP.

in m illim eters

2.1 ± 0.1

1.25 ± 0.1

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

Embossed tape 8 mm wide.

Pin3 (Collector) face to perfora-

tion side of the tape.

2SC4959–T1

2SC4959–T2

3 Kpcs/Reel.

Marking

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face

to perforation side of the tape.

* Please contact with responsible NEC person, if you require evaluation

sample.

Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)

PIN CONNECTIONS

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

1. Em itter

2. Base

3. Collector

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

V^CEO

VEBO

I^C

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

150

T^stg

–65 to +150

Caution; Electrostatic sensitive Device.

Document No. P10382EJ2V0DS00 (2nd edition)

(Previous No. TD-2410)

The m ark ★ show s revised points.

Date Published July 1995 P

Printed in Japan

1995

1992

12 3 4 5 6

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