2SC4960A

更新时间： 2024-09-24 22:52:43

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
3页	60K
描述
Silicon NPN triple diffusion planar type(For power switching)

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中文翻译

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数据手册

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2SC4960A 数据手册

Power Transistors

2SC4960, 2SC4960A

Silicon NPN triple diffusion planar type

For power switching

Unit: mm

Features

High-speed switching

■

15.0±0.3

11.0±0.2

5.0±0.2

●

3.2

●

High collector to base voltage V_CBO

●

Satisfactory linearity of foward current transfer ratio h_FE

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

φ3.2±0.1

2.0±0.2

●

2.0±0.1

0.6±0.2

Absolute Maximum Ratings (T =25˚C)

■

1.1±0.1

Parameter

Symbol

Ratings

Unit

2SC4960

900

5.45±0.3

Collector to

base voltage

V_CBO

10.9±0.5

2SC4960A

900

Collector to emitter voltage

Collector to

2SC4960

V_CES

900

800

V_CEO

1:Base

2:Collector

3:Emitter

emitter voltage 2SC4960A

Emitter to base voltage

Peak collector current

Collector current

900

V_EBO

I_CP

I_C

TOP–3 Full Pack Package(a)

Base current

I_B

0.3

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 900V, I_E= 0

I_EBO

V_EB= 7V, I_C= 0

µA

Collector to emitter 2SC4960

I_C= 1mA, I_B= 0

800

900

V_CEO

voltage

2SC4960A

I_C= 1mA, I_B= 0

h_FE1

h_FE2

V_CE= 5V, I_C= 0.05A

V_CE= 5V, I_C= 0.5A

I_C= 0.2A, I_B= 0.04A

V_CE= 10V, I_C= 0.05A, f = 1MHz

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

I_C= 0.2A, I_B1= 0.04A, I_B2= – 0.08A,

V_CC= 250V

µs

12 3

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