Datasheet > 2SC4961

2SC4961

更新时间： 2024-09-25 23:20:23

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数据手册

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2SC4961 数据手册

Power Transistors

2SC4961

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

4.6±0.2

9.9±0.3

2.9±0.2

Features

High-speed switching

■

φ3.2±0.1

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h_FE

2.6±0.1

0.7±0.1

●

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

1.2±0.15

1.45±0.15

0.75±0.1

Absolute Maximum Ratings (T =25˚C)

■

2.54±0.2

5.08±0.4

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

500

2 3

7°

500

Collector to emitter voltage

1:Base

2:Collector

3:Emitter

400

Emitter to base voltage

Peak collector current

Collector current

TO–220E Full Pack Package

I_C

Base current

I_B

1.5

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 500V, I_E= 0

I_EBO

V_CEO

h_FE1

h_FE2

V_EB= 5V, I_C= 0

Collector to emitter voltage

I_C= 10mA, I_B= 0

400

V_CE= 5V, I_C= 0.1A

V_CE= 5V, I_C= 2A

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 2A, I_B= 0.4A

1.0

1.5

I_C= 2A, I_B= 0.4A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

MHz

µs

0.7

2.0

0.3

I_C= 2A, I_B1= 0.4A, I_B2= – 0.8A,

V_CC= 150V

µs

12 3

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