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2SC4617-R-TP PDF预览

2SC4617-R-TP

更新时间: 2024-11-14 13:04:19
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 222K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SC4617-R-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHzBase Number Matches:1

2SC4617-R-TP 数据手册

 浏览型号2SC4617-R-TP的Datasheet PDF文件第2页浏览型号2SC4617-R-TP的Datasheet PDF文件第3页 
M C C  
2SC4617-Q  
2SC4617-R  
2SC4617-S  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN  
General Purpose  
Transistors  
·
Complement to 2SA1774-Q/R/S  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Dissipation  
Rating  
50  
60  
7
150  
Unit  
V
V
SOT-523  
A
V
D
mA  
mW  
R
C
PC  
TJ  
150  
-55 to +150  
Operating Junction Temperature  
C
B
TSTG  
Storage Temperature  
-55 to +150  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
E
B
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=1mAdc, IB=0)  
Min  
Typ  
Max  
Units  
E
50  
---  
---  
Vdc  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC=50uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=50uAdc, IC=0)  
Collector Cutoff Current  
(VCB=60Vdc, IE=0Vdc)  
Emitter Cutoff Current  
60  
7
---  
---  
---  
---  
Vdc  
Vdc  
H
G
J
K
---  
---  
120  
---  
---  
---  
---  
0.1  
0.1  
560  
0.4  
---  
IAdc  
IAdc  
---  
IEBO  
---  
(VEB=7Vdc, IC=0Vdc)  
DC Current Gain  
hFE  
---  
(IC=1mAdc, VCE=6Vdc)  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=50mAdc, IB=5mAdc)  
Transition Frequency  
(VCE=12Vdc, IC=2mAdc, f=100MHz)  
Output Capacitance  
---  
Vdc  
DIMENSIONS  
fT  
180  
2.0  
MHz  
pF  
INCHES  
MAX  
.067  
MM  
DIM  
A
B
MIN  
.059  
.030  
.057  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
Cob  
3.5  
(VCB=12Vdc, f=1.0MHz, IE=0)  
.033  
.069  
C
Classification OF hFE  
D
E
G
H
J
.020 Nominal  
0.50Nominal  
0.90  
Rank  
Range  
Marking  
Q
120-270  
BQ  
R
S
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
180-390  
BR  
270-560  
BS  
.000  
.028  
.004  
.010  
.000  
.70  
.100  
0.80  
.200  
.35  
.100  
.25  
K
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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